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  rev.2.00 aug 07, 2006 page 1 of 6 fx6asj-2 high-speed switching use pch power mos fet rej03g1438-0200 (previous: mej02g0279-0101) rev.2.00 aug 07, 2006 features ? drive voltage : 4 v ? v dss : ? 100 v ? r ds(on) (max) : 0.58 ? ? i d : ? 6 a ? integrated fast recovery diode (typ.) : 80 ns outline renesas package code: prss0004za-a (package name: mp-3a) 1. gate 2. drain 3. source 4. drain 1 3 2 4 1 2, 4 3 applications motor control, lamp control, soleno id control, dc-dc converters, etc. maximum ratings (tc = 25c) parameter symbol ratings unit conditions drain-source voltage v dss ?100 v v gs = 0 v gate-source voltage v gss 20 v v ds = 0 v drain current i d ?6 a drain current (pulsed) i dm ?24 a avalanche drain current (pulsed) i da ?6 a l = 100 h source current i s ?6 a source current (pulsed) i sm ?24 a maximum power dissipation p d 30 w channel temperature tch ? 55 to +150 c storage temperature tstg ? 55 to +150 c mass ? 0.32 g typical value
fx6asj-2 rev.2.00 aug 07, 2006 page 2 of 6 electrical characteristics (tch = 25c) parameter symbol min typ max unit test conditions drain-source breakdown voltage v (br)dss ?100 ? ? v i d = ?1 ma, v gs = 0 v gate-source leakage current i gss ? ? 0.1 a v gs = 20 v, v ds = 0 v drain-source leakage current i dss ? ? ?0.1 ma v ds = ?100 v, v gs = 0 v gate-source threshold voltage v gs(th) ?1.3 ?1.8 ?2.3 v i d = ?1 ma, v ds = ?10 v drain-source on-state resistance r ds(on) ? 0.46 0.58 ? i d = ?3 a, v gs = ?10 v drain-source on-state resistance r ds(on) ? 0.55 0.72 ? i d = ?3 a, v gs = ? 4 v drain-source on-state voltage v ds(on) ? ?1.38 ?1.74 v i d = ?3 a, v gs = ?10 v forward transfer admittance | y fs | ? 4.7 ? s i d = ?3 a, v ds = ? 5 v input capacitance ciss ? 1110 ? pf output capacitance coss ? 108 ? pf reverse transfer capacitance crss ? 44 ? pf v ds = ?10 v, v gs = 0 v, f = 1mhz turn-on delay time t d(on) ? 9 ? ns rise time t r ? 8 ? ns turn-off delay time t d(off) ? 72 ? ns fall time t f ? 33 ? ns v dd = ?50 v, i d = ?3 a, v gs = ?10 v, r gen = r gs = 50 ? source-drain voltage v sd ? ?1.0 ?1.5 v i s = ?3 a, v gs = 0 v thermal resistance r th(ch-c) ? ? 4.17 c/w channel to case reverse recovery time t rr ? 80 ? ns i s = ?6 a, d is /d t = 100 a/ s
fx6asj-2 rev.2.00 aug 07, 2006 page 3 of 6 performance curves power dissipation derating curve case temperature tc (c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds(on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds(on) (? ) 0 8 16 24 32 40 0 200 50 100 150 0 ?2 ? 4 ? 6 ? 8 ? 10 0 ? 4 ? 8 ? 12 ? 16 ? 20 p d = 30w v gs = ?10v ?5v ?2.5v ?3v ?3.5v ?4v 0 ?1.0 ?2.0 ?3.0 ?4.0 ?5.0 0 ?2?4?6?8?10 ?4v ?3v ?2.5v ?5v ?10v v gs = ?10 ?1 ?5 ?7 ?10 0 ?2 ?3 ?5 ?7 ?10 0 ?2 ?10 1 ?3 ?5 ?7 ?2 ?10 2 ?3 ?5 ?7 ?2 ?3 ?10 1 ?2 ?3 ?5 ?7 ?5 ?2 ?3 ?5 ?7 ?2 ?3.5v p d = 30w 0 ?4 ?8 ?12 ?16 ?20 0 ?2?4?6?8?10 i d = ?6a ?3a ?12a 0 0.2 0.4 0.6 0.8 1.0 ?10 ?1 ?10 0 ?2 ?3 ?5 ?7 ?10 1 ?2 ?3 ?5?7 ?10 2 ?2 ?3 ?5?7 ?4v v gs = ?10v tc = 25c single pulse tc = 25c pulse test tc = 25c pulse test tc = 25c pulse test tc = 25c pulse test tw = 10s 100s 1ms dc
fx6asj-2 rev.2.00 aug 07, 2006 page 4 of 6 transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance | y fs | (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance c (pf) switching time (ns) gate-source voltage vs. gate charge (typical) gate charge qg (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) ?10 ?1 ?7 ?10 0 ?2 ?3 ?4?5 ?7 ?2 ?3 ?4?5 ?7 10 ?1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 25c t c = 75c 125c 0 ?4 ?8 ?12 ?16 ?20 0 ?2?4?6?8?10 ?10 ?1 ? 7 ? 2 ? 3 ? 5 ? 7 ?10 0 ? 2 ? 3 ? 5 ? 7 10 1 10 2 2 3 5 7 2 3 5 5 7 t d(off) t d(on) t r t f ?10 0 ?3 ?5?7 ?2 ?10 1 ?3 ?5?7 ?2 ?10 2 ?3 ?5?7 ?2 ?3 10 2 2 3 4 5 7 10 3 2 3 4 5 7 2 ciss crss coss 0 ?2 ?4 ?6 ?8 ?10 0 4 8 121620 ?20v v ds = ?50v ?80v 0 ?4 ?8 ?12 ?16 ?20 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 t c = 75c 25c 125 c tc = 25c v ds = ?10v pulse test tch = 25c f = 1mhz v gs = 0v v ds = ?5v pulse test tch = 25c v gs = ?10v v dd = ?50v r gen = r gs = 50? v gs = 0v pulse test tch = 25c i d = ?6a
fx6asj-2 rev.2.00 aug 07, 2006 page 5 of 6 channel temperature tch (c) drain-source on-state resistance r ds(on) (tc) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs(th) (v) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds(on) (25c) channel temperature tch (c) transient thermal impedance characteristics channel temperature tch (c) breakdown voltage vs. channel temperature (typical) pulse width tw (s) transient thermal impedance z th(ch?c) (c/w) drain-source breakdown voltage v (br)dss (tc) drain-source breakdown voltage v (br)dss (25c) switching time measurement circuit switching waveform r l v dd r gen r gs vin monitor d.u.t. t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f 10 ?1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?50 0 50 100 150 0 ?0.8 ?1.6 ?2.4 ?3.2 ?4.0 ?50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 ?50 0 50 100 150 10 ?1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ?4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ?3 10 ?2 10 ?1 p dm tw d = t tw t d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse v gs = 0v i d = ?1ma v gs = ?10v i d = ?3a pulse test v ds = ?10v i d = ?1ma
fx6asj-2 rev.2.00 aug 07, 2006 page 6 of 6 package dimensions sc-63 0.32g mass[typ.] ? prss0004za-a renesas code jeita package code previous code unit: mm 10.4max 1max 0.5 0.2 0.1 0.1 0.5 0.2 0.76 0.76 0.2 2.3 0.2 5.3 0.2 6.6 1.4 0.2 6.1 0.2 1 0.2 2.3 2.5min 2.3 1 package name mp-3a order code lead form standard packing quantity standard order code standard order code example surface-mounted type taping 3000 type name ? t +direction (1 or 2) +3 FX6ASJ-2-T13 surface-mounted type plastic magazine (tube) 75 type name fx6asj-2 note: please confirm the specificati on about the shipping in detail.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to "http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology (shanghai) co., ltd. unit 204, 205, aziacenter, no.1233 lujiazui ring rd, pudong district, shanghai, china 200120 tel: <86> (21) 5877-1818, fax: <86> (21) 6887-7898 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> (2) 796-3115, fax: <82> (2) 796-2145 renesas technology malaysia sdn. bhd unit 906, block b, menara amcorp, amcorp trade centre, no.18, jalan persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 2006. renesas technology corp., all rights reserved. printed in japan. colophon .6.0


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